丝印：FFSD1065B；Package：DPAK-3；Silicon Carbide Schottky Diode 650 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：396.36 Kbytes 页数：7 Pages

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安森美半导体

丝印：FFSD1065B；Package：DPAK-3；Silicon Carbide Schottky Diode

文件：308.49 Kbytes 页数：7 Pages

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安森美半导体

汽车碳化硅 (SiC) 肖特基二极管，650 V

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the • Max Junction Temperature 175C\n• No Reverse Recovery / No Forward Recovery\n• Avalanche Rated 49 mJ\n• Positive Temperature Coefficient\n• AEC-Q101 Qualified and PPAP Capable\n• Ease of Paralleling\n• High Surge Current Capacity;

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安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 10A SIC SBD GEN1.5

ONSEMI

安森美半导体

Silicon Carbide Schottky Diode 650 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：396.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体