SiC 二极管，650V，8A，DPAK

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

ONSEMI

安森美半导体

丝印：FFSD0865A；Package：DPAK3；Silicon Carbide Schottky Diode

文件：437.59 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 8A SIC SBD

ONSEMI

安森美半导体

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：331 Kbytes 页数：5 Pages

PANJIT

強茂

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Switching Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV

文件：332.75 Kbytes 页数：5 Pages

PANJIT

強茂

Radial Leaded Inductors

文件：150.39 Kbytes 页数：7 Pages

ECM