丝印：FFSB3065B；Package：D2PAK-2；Silicon Carbide Schottky Diode

文件：368.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FFSB3065B；Package：D2PAK-3；Silicon Carbide Schottky Diode 650 V, 30 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：344.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FFSB3065B；Package：D2PAK-3；Silicon Carbide Schottky Diode

文件：454.59 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Carbide Schottky Diode 650 V, 30 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：344.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

碳化硅（SiC）肖特基二极管 – EliteSiC 30A 650V D2 D2PAK-2L封装

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the • High UIS, Surge Current, and Avalanche\n• 144mJ @ 25C\n• High Junction Temperature\n• Tj = 175C\n• Low Vf\n• 1.38V\n• No Qrr\n• ;

ONSEMI

安森美半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 30A SIC SBD GEN1.5

ONSEMI

安森美半导体

碳化硅（SiC）肖特基二极管 - EliteSiC系列30A 650V D2 D2PAK封装

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and higher\nreliability compared to Silicon. No reverse recovery current,\ntemperature independent switching characteristics, and excellent\nthermal performance sets Silicon Carbide as • Max Junction Temperature 175°C\n• Avalanche Rated 144 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC−Q101 Qualified and PPAP Capable;

ONSEMI

安森美半导体