碳化硅（SiC）肖特基二极管650V 4A D2PAK封装

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

ONSEMI

安森美半导体

丝印：FFSB0465A；Package：D2PAK；Silicon Carbide Schottky Diode

文件：408.3 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 4A SIC SBD

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安森美半导体

Silicon Carbide Schottky Diode

文件：460.67 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide Schottky Diode

文件：345.6 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Green Mode Fairchild Power Switch

Description The FSCM0465R is an integrated Pulse-Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high-voltage power switching regulator that combines an avalanche

文件：450.19 Kbytes 页数：20 Pages

Fairchild

仙童半导体