62 mm C-Series module with CoolSiC™ Trench MOSFET and pre-applied thermal interface material

Features • Electrical features - VDSS = 2000 V - IDN = 300 A / IDRM = 600 A - Low switching losses - High current density • Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material

文件：722.4 Kbytes 页数：15 Pages

INFINEON

英飞凌

CoolSiC ™ MOSFET半桥模块 2000 V

62 毫米 CoolSiC ™ MOSFET 半桥模块 2000 V、3.5 mΩ G1 采用著名的 62 毫米外壳设计，配备 M1H 芯片技术和预涂热界面材料 (TIM)。 • 高电流密度\n• 低开关损耗\n• 卓越的栅极氧化层可靠性\n• 最高的抗湿性\n• 坚固的集成体二极管\n• 高宇宙射线抗性\n• 高速开关模块\n• 对称模块设计\n• 标准构造技术;

Infineon

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 2000 V - IDN = 300 A / IDRM = 600 A - Low switching losses - High current density • Mechanical features - 4 kV AC 1 min insulation

文件：538.27 Kbytes 页数：15 Pages

INFINEON

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 2000 V - IDN = 300 A / IDRM = 600 A - Low switching losses - High current density - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder • Mechanical features - 4 kV AC 1 min insulation

文件：759.48 Kbytes 页数：15 Pages

INFINEON

英飞凌