62 mm C-Series module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode

Features • Electrical features - VCES = 1200 V - IC nom = 450 A / ICRM = 900 A - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder • Mechanical features - 4 kV AC 1 min insulation - High

文件：667.91 Kbytes 页数：15 Pages

INFINEON

英飞凌

62 mm C-Series module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode

Features • Electrical features - VCES = 1200 V - IC nom = 450 A / ICRM = 900 A - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder • Mechanical features - 4 kV AC 1 min insulation - High

文件：660.78 Kbytes 页数：15 Pages

INFINEON

英飞凌

62 mm C-Series module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode

Features • Electrical features - VCES = 1200 V - IC nom = 450 A / ICRM = 900 A - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder • Mechanical features - 4 kV AC 1 min insulation - High

文件：667.91 Kbytes 页数：15 Pages

INFINEON

英飞凌

1200 V, 450 A common emitter IGBT module

\n优势:\n• higher current capability\n• for NPC2 in 3-level configuration\n• Highest power density\n• Avoidance of paralleling of IGBT modules\n• Reduced system costs\n• Highest reliability;

Infineon

英飞凌