62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-applied Thermal Interface Material

Electrical Features • Extended operating temperature Tvj op • Low switching losses • Low VCEsat • Unbeatable robustness • VCEsat with positive temperature coefficient Mechanical Features • 4 kV AC 1min insulation • Package with CTI > 400 • High creepage and clearance distances • High p

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INFINEON

英飞凌

1200 V、400 A 双IGBT模块

The half-bridge 62 mm 1200 V, 400 A dual IGBT modules with fast TRENCHSTOP™ IGBT4, optimized Emitter Controlled diode and pre-applied Thermal Interface Material is the right choice for your design.  • Extended operating temperature Tvj op\n• Low switching losses\n• Low VCEsat\n• Unbeatable robustness\n• VCEsat with positive temperature coefficient\n• High power density\n• Pre-applied Thermal Interface Material\n\n优势:\n• Flexibility\n• Optimal electrical performance\n• Highest reliability;

Infineon

英飞凌

DFN

AD

亚德诺

上传：深圳市勤尚伟业电子有限公司

Module

Infineon Technologies

上传：深圳市华睿芯科技有限公司

Module

Infineon Technologies

上传：深圳市华睿芯科技有限公司