1200 V、300 A 双IGBT模块

The half-bridge 62 mm 1200 V, 300 A dual IGBT modules with fast TRENCHSTOP™ IGBT4, optimized Emitter Controlled diode and pre-applied Thermal Interface Material is the right choice for your design. • Superior solution for frequency controlled inverter drives\n• UL/CSA Certification with UL1557 E83336\n• Operating temperature up to 150°C\n• Optimized switching characteristic like softness and reduced switching losses\n• Existing packages with higher current capability\n• RoHS compliant\n\n优势:\n;

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英飞凌

62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereits aufgetragenem Thermal Interface Material

文件：603.47 Kbytes 页数：9 Pages

INFINEON

英飞凌

Package：模块；包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MODULE 1200V 300A

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英飞凌

62mm C-Serien Modul mit schnellem Trench

文件：459.25 Kbytes 页数：8 Pages

INFINEON

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62mm C-series module with fast trench/fieldstop IGBT4 and optimized EmCon Diode

62mm C-series module with fast trench/fieldstop IGBT4 and optimized EmCon Diode

文件：287.84 Kbytes 页数：8 Pages

INFINEON

英飞凌