EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

文件：4.24411 Mbytes 页数：34 Pages

INFINEON

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EasyDUAL module with CoolSiC™ Trench MOSFET and PressFIT / NTC

Features • Electrical features - VDSS = 1200 V - IDN = 50 A / IDRM = 100 A - Low inductive design - Low switching losses • Mechanical features - PressFIT contact technology - Integrated NTC temperature sensor - Rugged mounting due to integrated mounting clamps - AlN substrate with low th

文件：557.58 Kbytes 页数：16 Pages

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EasyDUAL module with CoolSiC™ Trench MOSFET and PressFIT / NTC / TIM

Features • Electrical features - VDSS = 1200 V - IDN = 50 A / IDRM = 100 A - Low inductive design - Low switching losses • Mechanical features - PressFIT contact technology - Integrated NTC temperature sensor - Rugged mounting due to integrated mounting clamps - Pre-applied thermal inter

文件：551.53 Kbytes 页数：16 Pages

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PrimePACK™3 B-series module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC

Features • Electrical features - VCES = 2300 V - IC nom = 1800 A / ICRM = 3600 A - TRENCHSTOPTM IGBT7 - Tvj,op = 150°C - Overload operation up to 175°C - Low VCE,sat - Low switching losses - High current density - Low inductive design • Mechanical features - Package with CTI > 400 - H

文件：707.9 Kbytes 页数：20 Pages

INFINEON

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PrimePACK™3 B-series module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC / pre-applied thermal interface material

Features • Electrical features - VCES = 2300 V - IC nom = 1800 A / ICRM = 3600 A - TRENCHSTOPTM IGBT7 - Tvj,op = 150°C - Overload operation up to 175°C - Low VCE,sat - Low switching losses - High current density - Low inductive design • Mechanical features - Package with CTI > 400 - H

文件：707.56 Kbytes 页数：20 Pages

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XHP™2 module with Trench/Fieldstop IGBT5, emitter controlled 5 diode and NTC

Features • Electrical features - VCES = 1700 V - IC nom = 1800 A / ICRM = 3600 A - Extended operating temperature Tvj op - High current density - Low switching losses - Low VCE,sat - Tvj,op = 175°C • Mechanical features - High creepage and clearance distances - High power and thermal cy

文件：827.24 Kbytes 页数：16 Pages

INFINEON

英飞凌

XHP™2 module with Trench/Fieldstop IGBT5, emitter controlled 5 diode and NTC / pre-applied thermal interface material

Features • Electrical features - VCES = 1700 V - IC nom = 1800 A / ICRM = 3600 A - Extended operating temperature Tvj op - High current density - Low switching losses - Low VCE,sat - Tvj,op = 175°C • Mechanical features - High creepage and clearance distances - High power and thermal cy

文件：832.24 Kbytes 页数：16 Pages

INFINEON

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62 mm C-Series module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 1200 V - IDN = 560 A / IDRM = 1120 A - High current density - Low switching losses • Mechanical features - 4 kV AC 1 min insulation

文件：721.69 Kbytes 页数：16 Pages

INFINEON

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET and pre-applied thermal interface material

Features • Electrical features - VDSS = 1200 V - IDN = 560 A / IDRM = 1120 A - High current density - Low switching losses • Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material

文件：732.32 Kbytes 页数：16 Pages

INFINEON

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET and pre-applied thermal interface material

Features • Electrical features - VDSS = 1200 V - IDN = 560 A / IDRM = 1120 A - High current density - Low switching losses • Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material

文件：732.32 Kbytes 页数：16 Pages

INFINEON

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