PrimePACK™3 B-series module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC

Features • Electrical features - VCES = 2300 V - IC nom = 1800 A / ICRM = 3600 A - TRENCHSTOPTM IGBT7 - Tvj,op = 150°C - Overload operation up to 175°C - Low VCE,sat - Low switching losses - High current density - Low inductive design • Mechanical features - Package with CTI > 400 - H

文件：707.9 Kbytes 页数：20 Pages

Infineon

英飞凌

PrimePACK™3 B-series module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC / pre-applied thermal interface material

Features • Electrical features - VCES = 2300 V - IC nom = 1800 A / ICRM = 3600 A - TRENCHSTOPTM IGBT7 - Tvj,op = 150°C - Overload operation up to 175°C - Low VCE,sat - Low switching losses - High current density - Low inductive design • Mechanical features - Package with CTI > 400 - H

文件：707.56 Kbytes 页数：20 Pages

Infineon

英飞凌

XHP™2 module with Trench/Fieldstop IGBT5, emitter controlled 5 diode and NTC

Features • Electrical features - VCES = 1700 V - IC nom = 1800 A / ICRM = 3600 A - Extended operating temperature Tvj op - High current density - Low switching losses - Low VCE,sat - Tvj,op = 175°C • Mechanical features - High creepage and clearance distances - High power and thermal cy

文件：827.24 Kbytes 页数：16 Pages

Infineon

英飞凌

XHP™2 module with Trench/Fieldstop IGBT5, emitter controlled 5 diode and NTC / pre-applied thermal interface material

Features • Electrical features - VCES = 1700 V - IC nom = 1800 A / ICRM = 3600 A - Extended operating temperature Tvj op - High current density - Low switching losses - Low VCE,sat - Tvj,op = 175°C • Mechanical features - High creepage and clearance distances - High power and thermal cy

文件：832.24 Kbytes 页数：16 Pages

Infineon

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET

Features • Electrical features - VDSS = 1200 V - IDN = 560 A / IDRM = 1120 A - High current density - Low switching losses • Mechanical features - 4 kV AC 1 min insulation

文件：721.69 Kbytes 页数：16 Pages

Infineon

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET and pre-applied thermal interface material

Features • Electrical features - VDSS = 1200 V - IDN = 560 A / IDRM = 1120 A - High current density - Low switching losses • Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material

文件：732.32 Kbytes 页数：16 Pages

Infineon

英飞凌

62 mm C-Series module with CoolSiC™ Trench MOSFET and pre-applied thermal interface material

Features • Electrical features - VDSS = 1200 V - IDN = 560 A / IDRM = 1120 A - High current density - Low switching losses • Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material

文件：732.32 Kbytes 页数：16 Pages

Infineon

英飞凌

EconoDUAL™3 module with CoolSiC™ Trench MOSFET and PressFIT / NTC

Features • Electrical features - VDSS = 1200 V - IDN = 500 A / IDRM = 1000 A - Integrated temperature sensor - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder • Mechanical features - Standard housing - PressFIT contact technology - Isolated base plate

文件：910.1 Kbytes 页数：19 Pages

Infineon

英飞凌

EconoDUAL™3 module with CoolSiC™ Trench MOSFET and PressFIT / pre-applied thermal interface material / NTC

Features • Electrical features - VDSS = 1200 V - IDN = 500 A / IDRM = 1000 A - Integrated temperature sensor - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder • Mechanical features - Standard housing - PressFIT contact technology - Isolated base plate

文件：913.16 Kbytes 页数：19 Pages

Infineon

英飞凌

EconoDUAL™3 module with CoolSiC™ Trench MOSFET and PressFIT / NTC

Features • Electrical features - VDSS = 1200 V - IDN = 500 A / IDRM = 1000 A - Integrated temperature sensor - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder • Mechanical features - Standard housing - PressFIT contact technology - Isolated base plate

文件：1.7073 Mbytes 页数：20 Pages

Infineon

英飞凌