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HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011(L)_15

SiliconNChannelMOSFETSeriesPowerSwitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HBO2011NIL

LampsforPhotolithography

Description PerkinElmerOptoelectronicsisaleadingmanufacturerofmercuryshortarclampsranginginoutputpowerfrom1000to8000watts.Theselampsareusedintheproductionofprintedcircuitboards,liquidcrystaldisplaysandsemiconductors.TheHSHSerieslampsareusedworldwideinmi

PerkinElmer

PerkinElmer Optoelectronics

HBO2011W

LampsforPhotolithography

Description PerkinElmerOptoelectronicsisaleadingmanufacturerofmercuryshortarclampsranginginoutputpowerfrom1000to8000watts.Theselampsareusedintheproductionofprintedcircuitboards,liquidcrystaldisplaysandsemiconductors.TheHSHSerieslampsareusedworldwideinmi

PerkinElmer

PerkinElmer Optoelectronics

HLMP-P2011

StandardSMTandThroughHoleLeadBendOptionsforSubminiatureLEDLamps

Description FlatTopPackage TheHLMP-PxxxSeriesflattoplampsuseanuntinted,nondiffused,truncatedlenstoprovideawideradiationpatternthatisnecessaryforuseinbacklightingapplications.Theflattoplampsarealsoidealforuseasemittersinlightpipeapplications. DomePackages

AVAGOAVAGO TECHNOLOGIES LIMITED

安华高

详细参数

  • 型号:

    FE2011

  • 功能描述:

    Peripheral IC

供应商型号品牌批号封装库存备注价格
FE
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
询价
WD
23+
65480
询价
WD
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
FUJI
2023+
FIG2
5800
进口原装,现货热卖
询价
FLATRON
25+
QFP
3000
强调现货,随时查询!
询价
FLATRON
24+
QFP
240
询价
FLATRON
2016+
PQFP
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
GNENSIS
23+
QFP208pb
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
FLATRON
2005
QFP
240
原装现货海量库存欢迎咨询
询价
GNENSIS
25+23+
QFP208pb
38008
绝对原装正品全新进口深圳现货
询价
更多FE2011供应商 更新时间2025-7-21 17:02:00