FDZ661PZ数据手册ONSEMI中文资料规格书

描述 Description

FDZ661PZ采用飞兆半导体先进的1.5 V PowerTrench®工艺以及一流的“微间距”薄型WLCSP封装工艺，可最大限度地减小PCB空间和rDS(on)。 先进的WLCSP MOSFET彰显了封装技术的突破性进展，使该器件将卓越的传热特性、超薄型(0.4 mm)和小型(0.8x0.8 mm2)封装、低栅极电荷和低rDS(on)融为一体。

特性 Features

• Max rDS(on) = 140 mΩ at VGS = -4.5 V, ID = -2 A
• Max rDS(on) = 182 mΩ at VGS = -2.5 V, ID = -1.5 A
• Max rDS(on) = 231 mΩ at VGS = -1.8 V, ID = -1 A
• Max rDS(on) = 315 mΩ at VGS = -1.5 V, ID = -1 A
• Occupies only 0.64 mm2 of PCB area. Less than 16% of the area of 2 x 2 BGA
• Ultra-thin package: less than 0.4 mm height when mounted to PCB
• HBM ESD protection level > 2 kV (Note 3)
• RoHS Compliant

应用 Application

• 手机
• Battery Management
• Load Switch
• Battery Protection