FDZ5047N数据手册ONSEMI中文资料规格书

描述 Description

General Description
Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.

特性 Features

• 22 A, 30 V.
   RDS(ON) = 2.9 mΩ @ VGS = 10 V
   RDS(ON) = 4.5 mΩ @ VGS = 4.5 V
• Occupies only 27.5 mm2 of PCB area:
   1/5 of the area of a TO-220 package
• Ultra-thin package: less than 0.90 mm height when mounted to PCB
• Outstanding thermal transfer characteristics
• Ultra-low gate charge x RDS(ON) productApplications
• DC/DC converters
• Solenoid drive

应用 Application

• DC/DC converters
• Solenoid drive