P-Channel 30 Volt PowerTrench BGA MOSFET

General Description Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with – 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low rDS(on) Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent t

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FAIRCHILD

仙童半导体

P-Channel 30 Volt PowerTrench® BGA MOSFET

General Description\nCombining Fairchild’s advanced 30 Volt P-Channel Trench II Process with – 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low rDS(on) Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent the • –12.5 A, –30 V. rDS(on) = 10.5 mW @ VGS = –10 V\n                  rDS(on) = 16.5 mW @ VGS = –4.5 V\n• Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8\n• Ultra-thin package: less than 0.8 mm height when mounted to PCB\n• 3.5 x 4 mm2 footprint\n• High power and current handling c;

ONSEMI

安森美半导体

FAST RECOVERY BRIDGE RECTIFIERS

FEATURES : * High case dielectric strength of 2000 VDC * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Ideal for printed circuit board * Pb / RoHS Free

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EIC

FAST RECOVERY

文件：106.58 Kbytes 页数：2 Pages

EIC

PNP Epitaxial Planar Silicon Transistor Driver Applications

Driver Applications Features • Composite type with 2 PNP transistors in one package, facilitating high-density mounting. • The FP208 is composed of 2 chips each equivalent to the 2SB1121.

文件：98.67 Kbytes 页数：3 Pages

SANYO

三洋