P-Channel 2.5 V Specified PowerTrench BGA MOSFET

General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transf

文件：178.73 Kbytes 页数：6 Pages

Fairchild

仙童半导体

P-Channel 2.5 V Specified PowerTrench BGA MOSFET

ONSEMI

安森美半导体

Radiation Hardened 8-Bit Universal Shift Register; Three-State

Description The Intersil HCTS299MS is a Radiation Hardened 8-bit shift/ storage register with three-state bus interface capability. The register has four synchronous operating modes controlled by the two select inputs (S0, S1). The mode select, the serial data (DS0, DS7) and the parallel data (IO

文件：118.29 Kbytes 页数：13 Pages

Intersil

Radiation Hardened 8-Bit Universal Shift Register; Three-State

文件：279.4 Kbytes 页数：12 Pages

Intersil

Radiation Hardened 8-Bit Universal Shift Register; Three-State

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件：529.32 Kbytes 页数：12 Pages

RENESAS

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