N-Channel 20 V (D-S) MOSFET

Features VDS (V) = 20V RDS(ON)

文件：457.97 Kbytes 页数：5 Pages

UMW

友台半导体

N-Channel 20 V (D-S) MOSFET

Applications Load switch Battery protection Power management Features VDS (V) = 20V RDS(ON)

文件：364.03 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：305；Package：SOT-23；N-Channel 20 V (D-S) MOSFET

Applications Load switch Battery protection Power management Features VDS (V) = 20V RDS(ON)

文件：364.03 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：305；Package：SOT-23；N-Channel 20 V (D-S) MOSFET

Features VDS (V) = 20V RDS(ON)

文件：457.97 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：305；Package：SOT-23；20V N-Channel PowerTrench MOSFET

General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High perfo

文件：172.56 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

N 沟道，PowerTrench® MOSFET，20V，0.9A，220mΩ

该20V N沟道MOSFET采用飞兆高压PowerTrench工艺制成。 已针对电源管理应用进行了优化。 •0.9 A, 20 V\n•RDS(ON) = 220 mΩ @ VGS = 4.5 V\n•RDS(ON) = 300 mΩ @ VGS = 2.5 V\n•低栅极电荷\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体