Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V). Features · –5A, –20 V, RDS(ON)= 55 mW@ VGS= –4.5

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FAIRCHILD

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Dual P-Channel 2.5V Specified PowerTrench MOSFET

文件：372.37 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Dual P-Channel 2.5V Specified PowerTrench MOSFET

ONSEMI

安森美半导体

Dual P-Channel 2.5V Specified PowerTrench짰 MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well

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FAIRCHILD

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Dual P-Channel 2.5V Specified PowerTrench MOSFET

文件：372.37 Kbytes 页数：5 Pages

FAIRCHILD

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：191.61 Kbytes 页数：8 Pages

FAIRCHILD

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Dual P-Channel 30-V (D-S) MOSFET

文件：1.05723 Mbytes 页数：9 Pages

VBSEMI

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Dual P-Channel 30-V (D-S) MOSFET

文件：1.05717 Mbytes 页数：9 Pages

VBSEMI

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双 P 沟道，2.5V 指定，PowerTrench® MOSFET，-20V，-3.8A，75mΩ

这些P沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •-3.8A、-20V RDS(on) = 0.075 Ω @ VGS = -4.5V RDS(on) = 0.105 Ω @ VGS = -2.5 V\n•低栅极电荷（7nC典型值）\n•快速开关速度\n•高性能沟道技术可实现极低的rDS(on)\n•高功率和高电流处理能力;

ONSEMI

安森美半导体

Dual P-Channel 2.5V Specified PowerTrench® MOSFET

ONSEMI

安森美半导体