首页 >FDS4435BZ-T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Plastic-EncapsulateMOSFETS DESCRIPTION TheFQ4435Qusesadvancedtrenchtechnologytoprovideexcellent RDS(on),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgate resistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebook CPUcorepowerconversion. APPLICATIONS BatteryS | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
Plastic-EncapsulateMOSFETS DESCRIPTION TheFQ4435SQusesadvancedtrenchtechnologytoprovideexcellentR shoot-throughimmunity,bodydiodecharacteristicsandltra-lowgateresistance. ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion. APPLICATIONS BatterySwitch L | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
SingleP-ChannelEnhancementModePowerMOSFET | FortuneFortune Semiconductor Corp. 富晶富晶电子股份有限公司 | Fortune | ||
HighPowerandcurrenthandingcapability | FS First Silicon Co., Ltd | FS | ||
P-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
MinisizeofDiscretesemiconductorelements | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
P-ChannelEnhancement-ModeMOSFET Features •AdvancedTrenchProcessTechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforLowVoltageDC/DCConverters •FastSwitchingforHighEfficiency | GE GE Industrial Company | GE | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-CHANNELENHANCEMENTMODEPOWERMOSFET | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM |
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