Plastic-Encapsulate MOSFETS

DESCRIPTION The FQ4435Q uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ide ally suited for use as a low side switch in Notebook CPU core power conversion. APPLICATIONS Battery S

文件：930.55 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

Plastic-Encapsulate MOSFETS

DESCRIPTION The FQ4435SQ uses advanced trench technology to provide excellent R shoot-through immunity, body diode characteristics and ltra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. APPLICATIONS Battery Switch L

文件：939.04 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

Single P-Channel Enhancement Mode Power MOSFET

文件：625.78 Kbytes 页数：6 Pages

Fortune

富晶电子

High Power and current handing capability

文件：461.9 Kbytes 页数：4 Pages

FS