FDR856P中文资料仙童半导体数据手册PDF规格书
FDR856P规格书详情
General Description
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.
Features
■ - 6.3 A, -30 V, RDS(ON) =0.025 Ω @ VGS = -10 V RDS(ON) =0.040 Ω @ VGS = -4.5 V.
■ SuperSOTTM-8 package: small footprint (40 less than SO-8);low profile (1mm thick);maximum power comperable to SO-8.
■ High density cell design for extremely low RDS(ON).
产品属性
- 型号：
FDR856P
- 功能描述：
MOSFET DISC BY MFG 2/02
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
SSOT-8 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
NA/ |
2140 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FSC |
00+ |
VSOP8 |
2140 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD |
23+ |
SSOP-8P |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
NS |
23+ |
原厂封装 |
9823 |
询价 | |||
FAIRCHILD/仙童 |
21+ |
SSOT-8 |
30000 |
优势供应 实单必成 可13点增值税 |
询价 | ||
FAIRCILD |
22+ |
SO-8 |
8000 |
原装正品支持实单 |
询价 | ||
FAI |
23+ |
MSOP/8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
FAIRCHILD |
24+ |
60000 |
询价 |
