FDR836P中文资料仙童半导体数据手册PDF规格书
FDR836P规格书详情
General Description
SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.
Features
• -6.1 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V RDS(ON) = 0.040 Ω @ VGS = -2.5 V
• High density cell design for extremely low RDS(ON).
• Small footprint (38 smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.
产品属性
- 型号:
FDR836P
- 功能描述:
MOSFET DISC BY MFG 2/02
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
SOP8 |
65200 |
一级代理/放心采购 |
询价 | ||
FAIRCHILD |
23+ |
原厂封装 |
9526 |
询价 | |||
FAIRCHI |
23+ |
TSOP8 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
FAIRCHILD/仙童 |
2022+ |
3000 |
全新原装 货期两周 |
询价 | |||
FAIRCHILD/仙童 |
23+ |
SOP-8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAIRCHI |
2016+ |
SOP8 |
3526 |
假一罚十进口原装现货原盘原标! |
询价 | ||
FAIRCHILD |
23+ |
SOP8 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
FSC |
24+ |
TO-220F |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
SOP-8 |
298 |
原装正品,假一罚十! |
询价 | ||
FAIRCHIL |
10+ |
SOP-8 |
6000 |
绝对原装自己现货 |
询价 |