FDR8305中文资料仙童半导体数据手册PDF规格书

General Description

These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

特性 Features

• 4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.5 V.

• Low gate charge (16.2nC typical).

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON).

• Small footprint (38 smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8.

Applications

• Load switch

• Motor driving

• Power Management