DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

N 沟道 UniFETTM MOSFET 250 V，51 A，60 mΩ

UniFETTM MOSFET 是飞兆半导体公司的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术开发。 该 MOSFET 产品专用于降低导通电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 48 mΩ（典型值） @ VGS = 10 V, ID = 25.5 A\n•低栅极电荷（典型值 55 nC)\n•低Crss（典型值 63 pF);

ONSEMI

安森美半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

N-Channel UniFETTM MOSFET 250 V, 51 A, 60 m廓

Description UniFET™ MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable fo

文件：518.94 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体