Single P-Channel, Logic Level, PowerTrench MOSFET

General Description This P -Channel Logic Level MOSFET is produced using FairchildSemiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance. Feature s · –2A, 20

文件：273.55 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Single P-Channel, Logic Level,PowerTrench® MOSFET

General Description\nThis P -Channel  Logic Level  MOSFET is produced using FairchildSemiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance.Feature s\n·  –2A, 20 V   RDS(ON)=

ONSEMI

安森美半导体

P-Channel MOSFET

XW

芯微半导体

Single P-Channel, Logic Level, PowerTrench MOSFET

General Description This P -Channel Logic Level MOSFET is produced using FairchildSemiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switchingperformance. Feature s · –2A, 20

文件：273.55 Kbytes 页数：8 Pages

Fairchild

仙童半导体

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● TrenchFET Power MOSFET ● Supper high density cell design

文件：406.48 Kbytes 页数：3 Pages

UMW

友台半导体

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● TrenchFET Power MOSFET ● Supper high density cell design APPLICATION ※ Battery protection ※ Load switch ※ Battery management

文件：351.63 Kbytes 页数：3 Pages

EVVOSEMI

翊欧

Single P-Channel, Logic Level, PowerTrench짰MOSFET

文件：211.6 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Single P-Channel, Logic Level, PowerTrench짰MOSFET

文件：211.6 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-Channel 20-V (D-S) MOSFET

文件：1.039829 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

单 P 沟道，逻辑电平，PowerTrench® MOSFET，-20V，-2A，70mΩ

此P沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件非常适合负载开关、功率管理、电池充电电路和DC/DC转换等便携式电子应用。 •-2A，20V RDS(ON) = 70 mΩ @ VGS = -4.5 VRDS(ON) = 70 mΩ @ VGS = -4.5 V\n•低栅极电荷（7.2nC典型值）\n• RDS(ON) = 70 mΩ @ VGS = -4.5 V\n•高功率版本的工业标准SOT-23封装。 相同的SOT-23引脚，可将功率处理能力提高30%。\n•高性能沟道技术可实现极低的RDS(ON)。\n• RDS(ON) = 110 mΩ @ VGS = -2.5 V;

ONSEMI

安森美半导体