功率 MOSFET 80V，单 N 沟道，136A，3.5mΩ，采用 Power 56 封装。

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Shielded Gate MOSFET Technology\n• Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 45 A\n• Max rDS(on) = 5.1 mΩ at VGS = 4.5 V, ID = 36 A\n• 50% Lower Qrr than Other MOSFET Suppliers\n• Lowers Switching Noise/EMI\n• MSL1 Robust Package Design\n• 100% UIL Tested\n• RoHS Compliant\n• Logic Level dr;

ONSEMI

安森美半导体

丝印：FDMS3D5N08LC；Package：PQFN8；MOSFET, N-Channel Shielded Gate, POWERTRENCH

文件：457.53 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3 m, 135 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • P

文件：147.38 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectificati

文件：162.53 Kbytes 页数：7 Pages

ONSEMI

安森美半导体