不对称双 N 沟道 PowerTrench® 功率级 MOSFET 30V

该器件在双PQFN封装中包括两个专用N沟道MOSFET。 该开关节点通过内部连接，能够为同步降压转换器提供简单的布局和布线。 控制MOSFET (Q1)和同步SyncFET (Q2)旨在提供优化的功效。 • Q1： N沟道\n•VGS = 10V，ID = 13 A时，最大rDS(on) = 8mΩ\n•VGS = 4.5V，ID = 11A时，最大rDS(on) = 11mΩQ2： N沟道\n•VGS = 10V，ID = 25 A时，最大rDS(on) = 2.6mΩ\n•VGS = 4.5 V，ID = 22 A时，最大rDS(on) = 5.8mΩ;

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The HFA3664 UpConverter with Gain Control is a monolithic bipolar PRISM® device for up conversion applications in the 2.3GHz to 2.7GHz range. Manufactured in the Intersil UHF1X process, the device consists of a double balanced mixer followed by a variable gain power preamp. An energy saving, TTL C

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The HFA3664 UpConverter with Gain Control is a monolithic bipolar PRISM® device for up conversion applications in the 2.3GHz to 2.7GHz range. Manufactured in the Intersil UHF1X process, the device consists of a double balanced mixer followed by a variable gain power preamp. An energy saving, TTL C

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