N 沟道，PowerTrench® SyncFET™，30V，22A，5.0mΩ

FDMS0312AS 设计用于最大限度地降低功率转换应用中的损耗。 先进的硅和封装技术完美融合，在保持卓越开关性能的同时，提供了最低的rDS(on)。 该器件可被额外作为一个有效的单片肖特基体二极管使用。 •最大值 rDS(on) = 5.0 mΩ（VGS = 10 V, ID = 18 A 时）\n•最大值 rDS(on) = 6.2 mΩ（VGS = 4.5 V, ID = 16 A 时）\n•先进的封装技术和硅技术相结合，实现了低rDS(on)和高效率\n•SyncFET肖特基体二极管\n•MSL1耐用封装设计\n•100%经过UIL测试\n•符合RoHS标准;

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