N 沟道，屏蔽门极，PowerTrench® MOSFET，80 V，147 A，3.1 mΩ

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Low RDS(on) and Qg\n• Minimizes conduction and switching losses\n• Very Low Qrr\n• reduces EMI and Voltage Overshoot\n• Lowers switching noise / EMI\n• 100% UIL tested;

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丝印：FDMS003N08C；Package：Power56；N-Channel Shielded Gate PowerTrench짰 MOSFET

文件：1.45846 Mbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

文件：268.63 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

文件：268.63 Kbytes 页数：7 Pages

ONSEMI

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MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：269.15 Kbytes 页数：7 Pages

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