N 沟道，Power Trench® SyncFET™，30V，18A，9.3mΩ

此FDMC7692S采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗而定制的。 该器件非常适用于笔记本电脑和便携式电池组中的电源管理和负载开关应用。 •VGS = 10 V，ID = 12.5 A时，最大rDS(on) = 9.3 mΩ\n•VGS = 4.5 V，ID = 10.4 A时，最大rDS(on) = 13.6 mΩ\n•通态电阻rDS(on)极低的高性能技术\n•终端是符合RoHS标准的无铅产品;

ONSEMI

安森美半导体

N-Channel Power Trench짰 SyncFETTM

文件：218.88 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET 30 V, 7.5 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast s

文件：339.92 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET 30 V, 7.5 m廓

文件：281.55 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET 30 V, 8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

文件：340.18 Kbytes 页数：7 Pages

Fairchild

仙童半导体