FDD9411

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

FDD9411L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

FDD9411_F085

Automotive Engine Control

FDD9411L

N-Channel Logic Level PowerTrench MOSFET

FDD9411L_F085

N-Channel Logic Level PowerTrench MOSFET

FP9411

RFAMPLIFIERMODEL

GL9411A

PNPSILICONPLANARMEDIUMPOWERhighgainTRANSISTOR

Description TheGL9411Aisdesignedforgeneralpurposeswitchingandamplifierapplications. Features ●4Ampscontinuouscurrent,upto10Ampspulsecurrent ●Lowsaturationvoltages ●HighGain

GL9411A

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

LF9411

VOICEIPMAGNETICSMODULES

MBF9411B

SurfaceAcousticWave(SAW)FiltersforMobileandPortablePhones

DESCRIPTION ThenewMBF9411B/9412BSurfaceAcousticWave(SAW)filtersuseOki’sthirdgenerationdesignandmanufacturingtechnologytoachieveahighout-of-bandattenuation,lowinsertionloss,andlowmanufacturingcostinanindustrystandard6-pinpackage,1.2-mmthickand3.0-mmsquare. F