isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

丝印：FDD86380；Package：D-PAK；N-Channel PowerTrench짰 MOSFET

文件：534.5 Kbytes 页数：7 Pages

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安森美半导体

N 沟道，PowerTrench® MOSFET，80 V，50 A，13.5 mΩ

N-Channel PowerTrench® MOSFET 80 V, 50 A, 13.5 mΩ • Typical RDS(on) = 11.2 mΩ at VGS = 10V, ID = 50 A\n• Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A\n• UIS Capability\n• RoHS Compliant\n• Qualified to AEC Q101;

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安森美半导体

MOSFET MV780/20V1000AMOSFET N-channelPowerTrench

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安森美半导体