FDD044AN03L

N-Channel PowerTrench MOSFET

Features •rDS(ON)=3.6mΩ(Typ.),VGS=4.5V,ID=35A •Qg(5)=48nC(Typ.),VGS=5V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •12VAutomotiveLoadControl •Starter/AlternatorSystems •Electr

FDD044AN03L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FDD044AN03L

N-channel Advanced Mode Power MOSFET

Features VDS=40V,ID=150A RDS(ON)

FDD044AN03L

MOSFET N-CH 30V 35A D-PAK;

FDU044AN03L

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=3.6mΩ(Typ.),VGS=4.5V,ID=35A •Qg(5)=48nC(Typ.),VGS=5V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •12VAutomotiveLoadControl •Starter/AlternatorSystems •Electr