100V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 2.6

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Fairchild

仙童半导体

N-Channel MOSFET

■ Features ● VDS (V) = 100V ● ID = 2.6 A (VGS = 10V) ● RDS(ON)

文件：1.58392 Mbytes 页数：4 Pages

KEXIN

科信电子

N 沟道 PowerTrench® MOSFET 100V，2.6A，125mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •2.6 A, 100 V\n•RDS(on) = 125 mΩ@ VGS = 10 V\n•RDS(on) = 135 mΩ @ VGS = 6 V\n•高性能沟道技术可实现极低的RDS(ON)\n•低栅极电荷（14nC典型值）\n•高功率和高电流处理能力\n•快速开关速度;

ONSEMI

安森美半导体

丝印：362P；Package：SOT23-6；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary 100V/3A ROS(ON) 87m2(Typ) @ VGs=-10V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)

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TECHPUBLIC

台舟电子