N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

文件：269.7 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 54mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：332.13 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道，PowerTrench® MOSFET，150V，29A，54mΩ

N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ, Fairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. • RDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A\n•Qg(tot) = 26nC (Typ.), VGS = 10V\n•低密勒电荷\n•低 QRR体二极管\n•UIS 能力（单脉冲和重复脉冲）;

ONSEMI

安森美半导体

N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

文件：247.74 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=29A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =54mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.94 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 40 A RDS(ON)

文件：876.16 Kbytes 页数：4 Pages

BYCHIP

百域芯