isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.25 Kbytes 页数：2 Pages

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文件：609.14 Kbytes 页数：11 Pages

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ONSEMI

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Features  VDS= 60V, ID= 30A RDS(ON)

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =45A@ TC=25℃ ·Drain Source Voltage : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.02Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：332.06 Kbytes 页数：2 Pages

ISC

无锡固电