| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FDA032N08 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.2mΩ(Max)@VGS=10V DESCRIPTION ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
FDA032N08 | N-Channel PowerTrench짰 MOSFET 75V, 235A, 3.2m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
N-ChannelPowerTrench짰MOSFET75V,235A,3.2m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=235A@TC=25℃ ·DrainSourceVoltage :VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
详细参数
- 型号：
FDA032N08
- 功能描述：
MOSFET PT3 75V 3.2mohm
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
询价 | ||
ON |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
询价 | |||
onsemi(安森美) |
24+ |
TO-3P |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
MOSFET |
23+ |
TO-3PN-3 |
7500 |
询价 | |||
Fairchild |
24+ |
TO-3PN |
150 |
询价 | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FSC进口原 |
25+23+ |
TO-3P |
23397 |
绝对原装正品全新进口深圳现货 |
询价 | ||
FAIRCHI |
17+ |
TO3P |
60000 |
保证进口原装可开17%增值税发票 |
询价 | ||
FAIRCHILD/仙童 |
17+ |
TO-3P |
29520 |
进口原装现货 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 |
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