Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features • Electrical features - VCES = 6500 V - IC nom = 500 A / ICRM = 1000 A - Low VCE,sat • Mechanical features - AlSiC base plate for increased thermal cycling capability - Extended storage temperature down to Tstg = -55 °C - High creepage and clearance distances - Package with CTI >

文件：485.55 Kbytes 页数：17 Pages

Infineon

英飞凌

IGBT模块

6500 V IHV 190mm chopper IGBT Module with IGBT3 - The best solution for your medium voltage and drives applications. • Low VCE(sat)\n• AlSiC Base Plate for increased Thermal Cycling Capability\n• Extended Storage Temperature down to T(stg) = -55°C\n• Package with CTI > 600\n• Package with enhanced Insulation of 10.2kV AC 1min\n• High Creepage and Clearance Distance\n\n优势:\n• Standardized housing;

Infineon

英飞凌

Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features • Electrical features - VCES = 6500 V - IC nom = 500 A / ICRM = 1000 A - Low VCE,sat • Mechanical features - AlSiC base plate for increased thermal cycling capability - Extended storage temperature down to Tstg = -55 °C - High creepage and clearance distances - Package with CTI >

文件：485.55 Kbytes 页数：17 Pages

Infineon

英飞凌

IGBT-Module

文件：527.68 Kbytes 页数：12 Pages

Infineon

英飞凌

high insulated module

文件：474.64 Kbytes 页数：9 Pages

Infineon

英飞凌