180V High voltage PNP switching transistor in SOT89

Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management functions. Features • 180 volts forward blocking Applications • Voice over internet protoco

文件：148.25 Kbytes 页数：6 Pages

ZETEX

180V High voltage PNP switching transistor in SOT89

Features • BVCEO > -150V • BVCEV > -180V • IC = -700mA high Continuous Collector Current • Low saturation voltage VCE(sat)

文件：142.18 Kbytes 页数：6 Pages

DIODES

美台半导体

Package：TO-243AA；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 180V 0.7A SOT89-3

DIODES

美台半导体

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60 (Typ) • Cost Effective PowerMac

文件：99.07 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

TIMER

文件：209.34 Kbytes 页数：6 Pages

NJRC

日本无线

TIMER

文件：209.34 Kbytes 页数：6 Pages

NJRC

日本无线