分立式半导体 肖特基势垒二极管（SBD）

Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making ・Low leakage current\n・High frequency operation \n・Epoxy Resin (UL94V-0 recognized);

Kyocera

京瓷

SBD DUAL DIODES - CATHODE COMMON

FEATURES * Similar to TO-220AB Case * Fully Molded Isolation * Dual Diodes – Cathode Common * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation * Wire-Bonded technology

文件：44.26 Kbytes 页数：6 Pages

NIEC

SBD DUAL DIODES - CATHODE COMMON

NIEC

10 Amp Glass Passivated Standard Rectifiers

文件：4.88973 Mbytes 页数：2 Pages

FCI

富加宜

10 Amp MINIATURE PLASTIC SILICON RECTIFIERS

10 Amp MINIATURE PLASTIC SILICON RECTIFIERS Features LOW COST LOW LEAKAGE DIFFUSED JUNCTION MEETS UL SPECIFICATION 94V-0

文件：132.89 Kbytes 页数：2 Pages

FCI

富加宜

Schottky Barrier Diode

FEATURES * Similar to TO-220AC Case * Fully Molded Isolation * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

文件：58.12 Kbytes 页数：6 Pages

NIEC