FCPF7N60NT

N-Channel SupreMOS짰 MOSFET 600 V, 6.8 A, 520 m廓

N-ChannelSupreMOS®MOSFET 600V,6.8A,520mΩ Description TheSupreMOS®MOSFETisFairchildSemiconductor®’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.Thisadvancedte

FCPF7N60NT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.52Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

FCPF7N60T

N-ChannelSuperFETMOSFET

FCPF7N60YDTU

600VN-ChannelMOSFET

FCPF7N60YDTU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FCU7N60

600VN-ChannelMOSFET

Description SuperFETis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features •650V@TJ=150°C •Typ.Rds(on)=0.53Ω •Ultralowga

FDD7N60NZ

N-ChannelUniFETTMIIMOSFET600V,5.5A,1.25廓

FDD7N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

FDD7N60NZTM

N-ChannelUniFETTMIIMOSFET600V,5.5A,1.25廓

FDP7N60NZ

N-ChannelUniFETTMIIMOSFET