FCPF380N65FL1

Isc N-Channel MOSFET Transistor

FCPF380N65FL1-F154

丝印：FCPF380N65F；Package：TO-220F；MOSFET – N-Channel, SUPERFET II, FRFET 650 V, 10.2 A, 380 m

Description SUPERFETIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,prov

FCPF380N65FL1-F154

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 10.2 A, 380 mΩ, TO-220F Ultra narrow lead; •700 V @TJ = 150°C\n• Higher system reliability at low temperature operation\n•Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF)\n• Low switching loss\n• Ultra Low Gate Charge (Typ. Qg = 33 nC)\n• Low switching loss\n•RDS(on) = 320 mΩ (Typ.)\n•100% Avalanche Tested\n•RoHS CompliantApplications\n;

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.