isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

N-Channel SuperFET MOSFET

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ONSEMI

安森美半导体

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，14 A，190 mΩ，TO-220F

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior swit • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 30 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillati;

ONSEMI

安森美半导体

ON/安森美
SMD

ON/安森美

上传：深圳市明嘉莱科技有限公司

ON/安森美
TO-220F

ON/安森美

上传：深圳市恒佳微电子有限公司