N-Channel SuperFET MOSFET

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ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

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ISC

无锡固电

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，17 A，190 mΩ，TO-220

SuperFET® III MOSFET is ON Semiconductor’s brand-new\nhigh voltage super-junction (SJ) MOSFET family that is utilizing\ncharge balance technology for outstanding low on-resistance\nand lower gate charge performance. This advanced technology\nis tailored to minimize conduction loss, provide superior\ • 700 V @ TJ = 150 oC\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 33 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillati;

ONSEMI

安森美半导体

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，17 A，190 mΩ，TO-220

SuperFET® III MOSFET is ON Semiconductor’s brand-new\nhigh voltage super-junction (SJ) MOSFET family that is utilizing\ncharge balance technology for outstanding low on-resistance\nand lower gate charge performance. This advanced technology\nis tailored to minimize conduction loss, provide superior\ • 700 V @ TJ = 150 °C\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)\n• Ultra Low Gate Charge (Typ. Qg = 33 nC)\n• Optimized Capacitance\n• 100% Avalanche Tested\n• Typ. RDS(on) = 159 mΩ\n• Internal Gate Resistance: 0.5Ω;

ONSEMI

安森美半导体