isc N-Channel MOSFET Transistor

文件：338.87 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：303.81 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：FCP125N65S3R0；Package：TO-220-3LD；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 m

文件：392.88 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，24 A，125 mΩ，TO-220

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior swit • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 46 nC)\n• Low switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)\n• Low switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillation\n;

ONSEMI

安森美半导体

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 24 A, 125 mΩ, TO-220

SuperFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc • 700 V @ TJ = 150 oC\n• Higher system reliability at low temperature operation\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)\n• Low switching loss\n• Ultra Low Gate Charge (Typ. Qg = 46 nC)\n• Low switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillation\n;

ONSEMI

安森美半导体