FOR HIGH FREQUENCY RECTIFICATION

20A 200V Cathode Common FEATURES * High VRM SBD * Low Forward Voltage Drop and Low Noise * Fully Molded Isolation * Dual Diodes Cathode Common For High FrequencyRectification

文件：69.34 Kbytes 页数：6 Pages

NIEC

SBD

文件：462.48 Kbytes 页数：1 Pages

NI

恩艾

Schottky Barrier Diode

文件：767.16 Kbytes 页数：7 Pages

KSS

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Schottky Barrier Diode

20A 200V Cathode CommonFEATURES\n* High VRM SBD\n* Low Forward Voltage Drop and Low Noise\n* Fully Molded Isolation\n* Dual Diodes Cathode Common For High FrequencyRectification * High VRM SBD\n* Low Forward Voltage Drop and Low Noise\n* Fully Molded Isolation\n* Dual Diodes Cathode Common For High FrequencyRectification;

NIEC

肖特基势垒二极管(SBD)-肖特基势垒二极管(SBD)

Kyocera

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Package：TO-220-3 全封装，隔离接片；包装：托盘 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 200V 20A TO-220 F

KYOCERA AVX

SBD

文件：462.48 Kbytes 页数：1 Pages

NI

恩艾

分立式半导体 肖特基势垒二极管（SBD）

Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making ・Low leakage current\n・High frequency operation \n・Epoxy Resin (UL94V-0 recognized);

Kyocera

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