Schottky Barrier Diode

FEATURES * Similar to TO-220AB Case * Fully Molded Isolation * Dual Diodes – Cathode Common * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

文件：56.45 Kbytes 页数：6 Pages

NIEC

Schottky Barrier Diode

文件：788.65 Kbytes 页数：7 Pages

KSS

京瓷

肖特基势垒二极管(SBD)-肖特基势垒二极管(SBD)

Kyocera

京瓷

Package：TO-220-3 全封装，隔离接片；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 150V 10A TO-220 F

KSS

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SBD

文件：139.18 Kbytes 页数：1 Pages

NI

恩艾

分立式半导体 肖特基势垒二极管（SBD）

Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making ・Low leakage current\n・High frequency operation \n・Epoxy Resin (UL94V-0 recognized);

Kyocera

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