FCH040N65S3

N 沟道 SuperFET® III MOSFET; •700 V（TJ=150°C 时）\n• Higher system reliability at low temperature operation\n•超低栅极电荷（典型值 Qg = 136 nC）\n• Lower switching loss\n•低有效输出电容（典型值 Coss(eff.) = 1154 pF）\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillation\n•典型值 RDS(on) = 35.4 mΩ\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n;

SuperFET® III MOSFET 是 ON Semiconductor 利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项先进技术专用于最小化传导损耗，提供卓越的开关性能，并承受极端 dv/dt 额定值。 因此，SuperFET III MOSFET 非常适用于系统小型化和高效化的各种功率系统。

FCH040N65S3

isc N-Channel MOSFET Transistor

•FEATURES •WithTO-247packaging •DrainSourceVoltage- :VDSS≥650V •Staticdrain-sourceon-resistance: RDS(on)≤99mΩ@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switc

FCH040N65S3

N-Channel SuperFET MOSFET

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhighvoltagesuper−junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon−resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconductionloss,provide

FCH040N65S3_F155

N-Channel SuperFET MOSFET

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhighvoltagesuper−junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon−resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconductionloss,provide

FCHD040N65S3

MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive,650V,65A,40m

NTHL040N65S3F

MOSFET??Power,N-Channel,SUPERFETIII,FRFET650V,65A,40m

NTHL040N65S3F

iscN-ChannelMOSFETTransistor

NTHL040N65S3HF

PowerMOSFET,N-Channel,SUPERFETIII,FRFET,650V,65A,40m

NTHLD040N65S3HF

MOSFET??Power,N-Channel,SUPERFETIII,FRFET650V,65A,40m

NVH040N65S3F

MOSFET??Power,N-Channel,SUPERFETIII,FRFET650V,65A,40m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro