N-Channel SuperFET MOSFET

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide

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ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 packaging • Drain Source Voltage- : VDSS ≥ 650V • Static drain-source on-resistance: RDS(on) ≤ 99mΩ@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switc

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ISC

无锡固电

N 沟道 SuperFET® III MOSFET

SuperFET® III MOSFET 是 ON Semiconductor 利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项先进技术专用于最小化传导损耗，提供卓越的开关性能，并承受极端 dv/dt 额定值。 因此，SuperFET III MOSFET 非常适用于系统小型化和高效化的各种功率系统。 •700 V（TJ=150°C 时）\n• Higher system reliability at low temperature operation\n•超低栅极电荷（典型值 Qg = 136 nC）\n• Lower switching loss\n•低有效输出电容（典型值 Coss(eff.) = 1154 pF）\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillation\n•典型值 RDS(on) = 35.4 mΩ\n•100% 经过雪崩击穿测试\;

ONSEMI

安森美半导体

N-Channel SuperFET MOSFET

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide

文件：927.6 Kbytes 页数：10 Pages

ONSEMI

安森美半导体