FCB070N65S3

Marking：FCB070N65S3；Package：D2-PAK；MOSFET - Power, N-Channel, SUPERFET III, Easy Drive 650 V, 44 A, 70 m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancetechnologyistailoredtominimize conductionloss,prov

FCB070N65S3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=44A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

FCB070N65S3

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，44 A，70 mΩ，D2PAK; • 700 V @ TJ = 150 oC\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 78 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillation\n• Typ. RDS(on) = 62 mΩ\n• 100% Avalanche Tested\n• RoHS Compliant\n• Wave soldering guarantee\n;

SuperFET® III MOSFET is ON Semiconductor’s brand-new\nhigh voltage super-junction (SJ) MOSFET family that is utilizing\ncharge balance technology for outstanding low on-resistance\nand lower gate charge performance. This advanced technology\nis tailored to minimize conduction loss, provide superior\nswitching performance, and withstand extreme dv/dt rate.\nConsequently, SuperFET III MOSFET is very suitable for\nvarious power system for miniaturization and higher efficiency.

NTBL070N65S3

MOSFET-Power,N-Channel,SUPERFETIII,Easy-drive650V,70m,44A