丝印：FCB070N65S3；Package：D2-PAK；MOSFET - Power, N-Channel, SUPERFET III, Easy Drive 650 V, 44 A, 70 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advance technology is tailored to minimize conduction loss, prov

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 44A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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无锡固电

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，44 A，70 mΩ，D2PAK

SuperFET® III MOSFET is ON Semiconductor’s brand-new\nhigh voltage super-junction (SJ) MOSFET family that is utilizing\ncharge balance technology for outstanding low on-resistance\nand lower gate charge performance. This advanced technology\nis tailored to minimize conduction loss, provide superior\ • 700 V @ TJ = 150 oC\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 78 nC)\n• Lower switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillati;

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MOSFET - Power, N-Channel, SUPERFET III, Easy-drive 650 V, 70 m, 44 A

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