isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

N-Channel MOSFET 600V, 22A, 0.165W

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Fairchild

仙童半导体

功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，22 A，165 mΩ，TO-3P

SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-resistance（导通电阻规格），卓越的开关性能和耐用性。SupreMOS MOSFET 技术适用于高频开关电源转换器应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 •BVDSS = 650V @ TJ = 150°C\n•RDS(on) = 140mΩ （典型值）@ VGS = 10V，ID = 11A\n•超低栅极电荷（典型值Qg = 45nC )\n•低有效输出电容（典型值Coss.eff = 196.4pF )\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)

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Fairchild

仙童半导体

N-Channel MOSFET 600V, 22A, 0.165W

Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：338.67 Kbytes 页数：2 Pages

ISC

无锡固电