FC13

Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications

Features •Compositetypewith2FETscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC13isformedwithtwochips,beingequivalenttothe2SK303,placedinonepackage. •Excellentinthermalequilibriumandpaircapabilityandespeciallysuited

FC130

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistance(R1=10kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC130isformedwithtwochips,beingequivalenttothe2SC3859,placed

FC131

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistances(R1=10kΩ,R2=47kΩ)). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC131isformedwithtwochips,beingequivalenttothe2SA1

FC132

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistances(R1=10kΩ,R2=47kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC132isformedwithtwochips,beingequivalenttothe2SC40

FC133

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistances(R1=10kΩ,R2=47kΩ)). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC133isformedwithtwochips,beingequivalenttothe2SA1

FC134

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistances(R1=10kΩ,R2=47kΩ)). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC134isformedwithtwochips,beingequivalenttothe2SC4

FC135

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistance(R1=4.7kΩ)). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC135isformedwithtwochips,beingequivalenttothe2SA1510,plac

FC136

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistance(R1=4.7kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC136isformedwithtwochips,beingequivalenttothe2SC3900,place

FC137

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistances(R1=4.7kΩ)). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC137isformedwithtwochips,beingequivalenttothe2SA1510,pla

FC138

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistance(R1=4.7kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC138isformedwithtwochips,beingequivalenttothe2SC3900,place