PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance (R1=10kΩ). • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC127 is formed with two chips, being equivalent to the 2SA1496, placed

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SANYO

三洋

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

ONSEMI

安森美半导体

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

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ONSEMI

安森美半导体

Germanium PNP Transistor Horizontal Output Amplifier

Germanium PNP Transistor Horizontal Output Amplifier

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NTE

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

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MOTOROLA

摩托罗拉